Abstract
The etching processes of Si [1 0 0] wafer have been studied using two different methods; namely wet chemical etching method, using HNO3-HF-CH3COOH solution, and Ultra Low Frequency Plasma (ULFP) method at (1KHz). Ion etching used inert gas only (e.g., argon gas) while ion chemical etching used an active gas (beside the inert gas) such as oxygen techniques were used. Calculations of the different parameters produced by chemical etching and plasma etching for silicon wafer (sample) such as ( hole depth, hole width and etching rate) were investigated using the images of Optical Scanning Microscope (OSM) and Joel Scanning Microscope (JSM). The formed hole width (omega) increased by increasing the exposure time of the sample in the different types of etching. Values of the hole width were in the range of 2- 7 mu m during exposure times of (30 to 100 min). The sample growth exponent constant was about (0.0707 and 0.0537 mu m/ min). Hole has depths in the range of( 0.5 to 3 mu m) in time of (30 to 100 min). The average distances between the holes were decreased by increasing the exposure time from (14 to 4 mu m) in the time range of (30 - 100 min). The rates of etching were ranged from (0.0226 to 0.0448 mu m/ min) either for dry or wet etching.