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Study of the interactions of ions in silicon: Transient processes and defect production
Conference proceeding

Study of the interactions of ions in silicon: Transient processes and defect production

S Lazanu, I Lazanu, G Iordache, I Stavarache, A Lepadatu, A Slav and IEEE
CAS 2010 Proceedings (International Semiconductor Conference), Vol.2, pp.329-332
10/2010
DOI: https://doi.org/10.1109/SMICND.2010.5650688

Abstract

Atomic layer deposition Energy loss Gold ion irradiation Ionization Silicon Transient analysis transient processes
The thermal spike model which takes into account both ionization and nuclear energy loss processes of the projectile as distinct electronic and atomic heat sources is used to describe transient processes induced by ions in silicon. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated. The contribution of the rise in temperature on defect formation and annealing is considered.

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