Abstract
The present work deals with localized dissolution processes (git and pore initiation and growth) of and GaAs (100) and Si (100) in HCl and HF electrolytes, respectively. For n-type material in the dark, a characteristic pore formation potential (PFP) exists. This PFP is significantly lowered at surface defects. Using Si(++) focussed ion beam implantation to intentionally create surface defects in both Si and GaAs, patterns of arbitrary shape down to the sub-micrometer scale can be written. We demonstrate that these patterns can be selectively developed in the electrochemical process to form visible light emitting porous semiconductor strucures at implanted sites only. This novel process may find application in Si nanostructure formation technology.