Abstract
In this work we employed lithographic techniques, combined with sputtering depositions, to fabricate semiconductor metal-oxide (MOX) gas sensors with controlled grain dimensions. The basic idea is to replace the continuous sensing film of standard MOX sensors with a pattern of wires in the sub-micron scale, thus controlling the lateral size of the grains. Regarding the fabrication process, we followed two different approaches: a plain lift-off technique and a substrate patterning process. We present a comparison between the results of both the approaches. Furthermore, we tested the electrical responses to several gases and compared them with those of continuous film sensors. The experimental data highlight an improvement for the patterned sensors.