Abstract
Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN / GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN / GaN QWs. The use of double-metallic Au / Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.