Abstract
Properties of high quality graphene synthesized using chemical vapor deposition (CVD) are reported. Parameters such as the rate and time of gas flow are varied during synthesis. The as-grown graphene is then transferred onto oxidized silicon substrate by employing single and double layer polymer-based techniques. Next, surface morphology, electrical and optical properties of the synthesized mono-few layer graphene are characterized using optical microscope, Raman spectroscopy, UV-VIS spectroscopy, and four-point probe measurement. Results show that by using the appropriate combination of synthesis parameters and transfer technique, high quality graphene with electrical sheet resistance as low as 900 Omega/sq and optical transparencies as high as 94% can be obtained. Such quality graphene is highly desirable as transparent conductive electrodes in applications like light emitting diodes, solar cells and optical sensors.