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Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications
Conference proceeding

Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

H C Wen, H N Alshareef, H Luan, K Choi, P Lysaght, H R Harris, C Huffman, G A Brown, G Bersuker, P Zeitzoff, …
2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, Vol.2005, pp.46-47
01/01/2005
DOI: https://doi.org/10.1109/.2005.1469206

Abstract

Computer Science Computer Science, Hardware & Architecture Engineering Engineering, Electrical & Electronic Science & Technology Technology
Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000 degrees C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

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