Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama; Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1002/pssc.200983863

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Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Conference proceeding

Peer reviewed

Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, Vol.7(10), pp.2419-2422

Physica Status Solidi C-Current Topics in Solid State Physics

10/2010

DOI: https://doi.org/10.1002/pssc.200983863

Abstract

Physical Sciences

Physics

Physics, Applied

Science & Technology

We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 degrees C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Title: Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
Creators - without role: Takayuki Sugiyama - Meijo University
Daisuke Iida - Meijo University
Motoaki Iwaya - Meijo University
Satoshi Kamiyama - Meijo University
Hiroshi Amano - Meijo University
Isamu Akasaki - Meijo University
Contributors - without role: P Bhattacharya
U K Mishra
S Keller
Y Dora
Publication Details: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, Vol.7(10), pp.2419-2422
Series: Physica Status Solidi C-Current Topics in Solid State Physics
Publisher: Wiley
Number of pages: 4
Identifiers: 9945344008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding