Abstract
This paper presents a theoretical investigation of electromagnetic wave tunneling through bianisotropic-bianisotropic interfaces. The dispersion relation and the conditions for terahertz evanescent wave tunneling in bianisotropic thin films are derived. The developed Berreman's matrix model is used to acquire the evanescent field characteristics through the bianisotropic layers. Fields incident with frequencies belong to the structure spectral interval will be tunneled effectively to the other side of the bianisotropic thin film via evanescent waves.