The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers

M. S. Al-Ghamdi; P. M. Smowton; A. B. Krysa; IEEE

doi:10.1109/ISLC.2012.6348368

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The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers

M. S. Al-Ghamdi, P. M. Smowton, A. B. Krysa and IEEE

2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), pp.80-81

IEEE International Semiconductor Laser Conference

01/01/2012

DOI: https://doi.org/10.1109/ISLC.2012.6348368

Abstract

Engineering

Engineering, Electrical & Electronic

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We measure optical gain and absorption spectra for structures with different p-doping level. Results show an increase in maximum modal gain at fixed quasi-Fermi level separation and high defect number in the high p-doped structure.

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Title: The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers
Creators - without role: M. S. Al-Ghamdi - King Abdulaziz University
P. M. Smowton - Cardiff University
A. B. Krysa - Engineering and Physical Sciences Research Council
IEEE
Publication Details: 2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), pp.80-81
Series: IEEE International Semiconductor Laser Conference
Publisher: IEEE
Number of pages: 2
Identifiers: 9912123208331
Academic Unit: Al Baha University
Language: English
Resource Type: Conference proceeding