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The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure
Conference proceeding

The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure

C.L. Tan, H.S. Djie, C.K. Tan, V. Hongpinyo, Y.H. Ding, B.S. Ooi and IEEE
2009 IEEE LEOS Annual Meeting Conference Proceedings, pp.147-148
10/2009
DOI: https://doi.org/10.1109/LEOS.2009.5343093

Abstract

Biomedical measurements Chemical lasers Chemical technology Extraterrestrial measurements Fiber lasers Gas lasers Optical fiber dispersion Photoluminescence Quantum computing Semiconductor lasers
We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission.

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