The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride

Rabaa Bousbih; Wissem Dimassi; Ikbel Haddadi; Hatem Ezzaouia

doi:10.1002/pssc.201200344

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The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride

Conference proceeding

Peer reviewed

The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride

Rabaa Bousbih, Wissem Dimassi, Ikbel Haddadi and Hatem Ezzaouia

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, Vol.9(10-11), pp.2189-2193

Physica Status Solidi C-Current Topics in Solid State Physics

10/2012

DOI: https://doi.org/10.1002/pssc.201200344

Abstract

Materials Science

Materials Science, Multidisciplinary

Physical Sciences

Physics

Physics, Applied

Physics, Condensed Matter

Science & Technology

Technology

Silicon nitride (SiNx) thin films were grown on silicon by plasma-enhanced chemical vapor deposition (PECVD) method at low temperature by varying the silane (SiH4) to nitrogen (N-2) ratio in the plasma. As-deposited samples were investigated by varying annealing temperature from 400 degrees C to 950 degrees C in infrared (IR) heated belt furnace, in order to study their properties and correlate them to the chemical composition of the layers to find the optimized condition for application in silicon solar cells. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Title: The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride
Creators - without role: Rabaa Bousbih - Research and Technology Center of Energy
Wissem Dimassi - Research and Technology Center of Energy
Ikbel Haddadi - Research and Technology Center of Energy
Hatem Ezzaouia - Research and Technology Center of Energy
Contributors - without role: S Pizzini
G Kissinger
H YamadaKaneta
J Kang
Publication Details: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, Vol.9(10-11), pp.2189-2193
Series: Physica Status Solidi C-Current Topics in Solid State Physics
Publisher: Wiley
Number of pages: 5
Identifiers: 9933843808331
Academic Unit: University of Tabuk; King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding