Abstract
Recently both, electrical and material properties of tantalum oxide (Ta2O5) have been found to be useful for microelectronics and optoelectronics devices. The need of higher permittivity of dielectric material attracts more attention towards the tantalum oxide thin films. To ensure good electrical performance of the resulting device DC sputtering technique has been used for depositing Ta2O5 films. In the present work, the potential of Ta2O5 thin films as a high K dielectric for CMOS devices has been studied. Physical characteristics of the Ta2O5 dielectrics were investigated with x-ray diffraction and electrical properties were measured by capacitance-voltage (C-V) analysis. The interface state density of 1* 10 (11) cm(-2) eV(-1) have been achieved for 50 nm Ta2O5 film. The calculated value of dielectric constant of as deposited Ta2O5 oxide film was found to be 29. This Ta2O5 dielectric shows promise for future generation of CMOS devices.