Sign in
Back
Thermal Annealing Induced Relaxation of Compressive Strain in Porous GaN Structures
Conference proceeding

Thermal Annealing Induced Relaxation of Compressive Strain in Porous GaN Structures

Ahmed B. Slimane, Adel Najar, Tien K. Ng, Boon S. Ooi and IEEE
2012 IEEE PHOTONICS CONFERENCE (IPC), pp.921-922
IEEE Photonics Conference
01/01/2012
DOI: https://doi.org/10.1109/IPCon.2012.6359296

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology
The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm(-1) in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 +/- 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

Metrics

1 Record Views

Details