Abstract
Charge trapping will have a strong effect on the performance of organic light emitting diodes. Here, different models for such trapping in disordered organic semiconductors are presented. The benefits of different transient experimental techniques are explored. Results are presented for electroluminescent polymer diodes which are fully depleted, or contain a depletion region-type Schottky barrier. The transient behavior can be explained by a single energy trap site emptying into a Gaussian distribution of transport sites. (Author)