Transmission electron microscopy characterization of GaN nanowires : III-V Nitrides and Silicon Carbide

Conference proceeding

Peer reviewed

Z LILIENTAL-WEBER, Y. H Gao and Y Bando

Journal of electronic materials, Vol.31(5), pp.391-394

2002

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Nanoscale materials and structures: fabrication and characterization

Physics

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Title: Transmission electron microscopy characterization of GaN nanowires : III-V Nitrides and Silicon Carbide
Creators - without role: Z LILIENTAL-WEBER - Lawrence Berkeley National Laboratory
Y. H Gao - Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science, Ibaraki 305-0044, Japan
Y Bando - Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science, Ibaraki 305-0044, Japan
Publication Details: Journal of electronic materials, Vol.31(5), pp.391-394
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9952475308331
Academic Unit: King Saud University
Language: English
Resource Type: Conference proceeding