Abstract
Conference Title: 2019 IEEE International Reliability Physics Symposium (IRPS) Conference Start Date: 2019, March 31 Conference End Date: 2019, April 4 Conference Location: Monterey, CA, USA Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area $(\geq 10^{4} \mu \text{m}^{2})$ , in which currents in each resistive state may be driven by largely defective regions that are not applicable in smaller devices. Here we present the first fabrication of cross-point memristors with sizes of $5 \mu \text{m} \times 5 \mu \text{m}$ using multilayer heterogeneous van der Waals structure. We have constructed graphene/hexagonal boron nitride/graphene (G/h-BN/G) devices using Ti and Au electrodes. The devices can show two-state or tristate operation depending on the current limitation (CL) used. Similar memristors with larger size of $100 \mu \text{m} \times 100 \mu \text{m}$ do not show this behavior, indicating that miniaturization of 2D materials based memristors is key to achieve this performance.