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Tunneling recombination mechanism in n-type a-Si:H steady state regime
Conference proceeding   Peer reviewed

Tunneling recombination mechanism in n-type a-Si:H steady state regime

Tobbeche Souad and Merazga Amar
ADVANCED TECHNOLOGIES IN MANUFACTURING, ENGINEERING AND MATERIALS, PTS 1-3, Vol.774-776, pp.816-823
Advanced Materials Research
01/01/2013
DOI: https://doi.org/10.4028/www.scientific.net/AMR.774-776.816

Abstract

Engineering Engineering, Manufacturing Engineering, Mechanical Materials Science Materials Science, Multidisciplinary Science & Technology Technology
In this paper we developed a recombination model for the steady state photoconductivity (SSP) with the assumption that the correlated dangling bond states (DB) act as the essential recombination centres and the electron recombination proceeds by tunneling from the conduction band tail states (TS) for n-type a-Si:H. The modeled temperature dependence of the SSP presents the main measured features, particularly the small activation energy and the thermal quenching.

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