Two abnormal peaks induced by plasma process in the noise spectra of etched Si and Si1-xGex

H Ouacha; M Mamor; M Willander; A Ouacha; F D Auret; S A Goodman

doi:10.1109/PPID.2000.870623

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Conference proceeding

Two abnormal peaks induced by plasma process in the noise spectra of etched Si and Si1-xGex

H Ouacha, M Mamor, M Willander, A Ouacha, F D Auret and S A Goodman

2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, pp.101-104

01/01/2000

DOI: https://doi.org/10.1109/PPID.2000.870623

Abstract

Engineering

Engineering, Electrical & Electronic

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

The impact of plasma damage on the flicker noise properties of Ti/p-Si and Ti/p-Si1-xGex (with x = 0.05) Schottky junctions is investigated in this work. Two abnormal peaks are observed in the 1/f noise spectra at around 500 Hz and 10 kHz which are the characteristics of the plasma damage. These peaks are shown to be independent of the applied bias and Ge concentration. From the noise experimental data, the introduced noise during the plasma etching process is attributed to the recombination generation noise.

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Title: Two abnormal peaks induced by plasma process in the noise spectra of etched Si and Si1-xGex
Creators - without role: H Ouacha - Chalmers University of Technology
M Mamor
M Willander
A Ouacha
F D Auret
S A Goodman
Contributors - without role: M Koyanagi
M Egelhardt
C T Gabriel
Publication Details: 2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, pp.101-104
Publisher: Amer Vacuum Soc Northern California Chapter
Number of pages: 4
Identifiers: 9951650408331
Academic Unit: King Saud University
Language: English
Resource Type: Conference proceeding