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Two-dimensional numerical simulation of metal-semiconductor-metal photodetector structures
Conference proceeding

Two-dimensional numerical simulation of metal-semiconductor-metal photodetector structures

N. Debbar and IEEE
The 14th International Conference on Microelectronics, Vol.2002-, pp.269-272
2002
DOI: https://doi.org/10.1109/ICM-02.2002.1161545

Abstract

Charge carrier processes Current-voltage characteristics Electron mobility Electrostatics Fingers Nonlinear equations Numerical simulation Photodetectors Poisson equations Schottky barriers
A two-dimensional simulation program, based on the drift-diffusion model, is developed. The program numerically solves the basic semiconductor equations. The model is applied to simulate the dark current voltage characteristics of a planar metal-semiconductor-metal photodetectors (MSM).

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