Abstract
A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of beta-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 mu W/cm(2) were achieved.