Abstract
Strain induced drive current enhancement on Double-Gate (DG) FinFETs from Contact Etch Stop Liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET Ring-Oscillator (RO) delay performance. FinFET hot-carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased impact-ionization from strain induced bandgap narrowing at the drain-body junction.