Verification of an improved BSIM3v3 MOSFET model

B. Toner; V.F. Fusco; M.S. Alam; G.A. Armstrong; IEEE

doi:10.1109/HFPSC.2000.874089

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Conference proceeding

Verification of an improved BSIM3v3 MOSFET model

B. Toner, V.F. Fusco, M.S. Alam, G.A. Armstrong and IEEE

2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539), pp.96-101

2000

DOI: https://doi.org/10.1109/HFPSC.2000.874089

Abstract

Capacitance

Contact resistance

Costs

Immune system

Measurement standards

MOSFET circuits

Radio frequency

Resistors

Scattering parameters

Semiconductor device modeling

In this paper the BSIM3v3 MOSFET model has been adapted for use at S-band frequencies. Three components have been added to the model to account for extrinsic physical effects. Justification for these components is given and full verification of the model has been completed through DC, S-parameter, power and noise measurement. Excellent agreement has been found between measured and simulated results, with the resulting model providing a good representation of a 0.25 /spl mu/m CMOS device in the linear region of operation.

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Title: Verification of an improved BSIM3v3 MOSFET model
Creators - without role: B. Toner - Queen's University Belfast
V.F. Fusco
M.S. Alam
G.A. Armstrong
IEEE
Publication Details: 2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539), pp.96-101
Publisher: IEEE
Identifiers: 9916292708331
Academic Unit: Imam Mohammad Ibn Saud Islamic University (IMSIU)
Language: English
Resource Type: Conference proceeding