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Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS
Conference proceeding

Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS

H.C. Wen, K. Choi, P. Lysaght, P. Majhi, H. Alshareef, C. Huffman, R. Harris, H. Luan, B.H. Lee, N. Yamada, …
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), pp.107-108
2005
DOI: https://doi.org/10.1109/VTSA.2005.1497098

Abstract

Control systems Dielectric measurements Dielectric substrates Electrodes Hafnium High K dielectric materials High-K gate dielectrics Instruments MOS capacitors X-ray diffraction
A material system Ru-Hf alloys was evaluated for its potential as future generation dual-metal CMOS electrode. It was observed that the effective work function of the alloy could be modulated from 4.3 to 4.8 eV by varying the Hf content in the Ru-Hf alloy from 65% to 0%. Additionally, comparison between the Ru-Hf (1:1) with Ru-Ta (1:1) suggests that the two alloy systems exhibit similar behavior in work function modulation.

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