Abstract
The present study follows up on previous work demonstrating that electron-beam induced carbon deposition can be used as a negative resist for electrdeposition of metals on semiconductor surfaces. The E-beam activates the reaction of the residual hydrocarbon molecules issued from the pump oil in scanning electron microscope chamber to form a deposit with mechanical and electrical properties close to diamond (i.e. the deposits are electrically insulating). Carbon deposits in the order of 1 nm thickness are sufficient to block an electrodeposition reaction of materials completely selectively and thus can be used for high definition patterning of semiconductor surfaces in the 1 to 100 nm range. The present work demonstrates how to use C-masks for porous silicon patterning, i.e. to use comtamination writing in a SEM to suppress selectively the pore formation process at treated locations.