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Photoelectrochemical properties of InGaN for H2 generation from aqueous water
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Photoelectrochemical properties of InGaN for H2 generation from aqueous water

K Fujii, K Kusakabe and K Ohkawa
Japanese Journal of Applied Physics, Part 1, Vol.44(10), pp.7433-7435
WTI-Frankfurt-digital GmbH
2005
DOI: https://doi.org/10.1143/JJAP.44.7433

Abstract

Drei-Fünf-Verbindung elektrochemische Analyse Elektrode Galliumverbindung Halbleiter mit großer Energielücke Indiumgalliumnitrid Indiumverbindung Leitungsband optische Absorption Photoleitfähigkeit
The photoelectrochemical properties of InxGa1-xN (x=0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.

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