Abstract
Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of similar to 2000mmol(-1) was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 degrees C were utilized to prevent formation of the cubic phase and maintain wurtzite structure. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim