Abstract
► (110) FinFET electron mobility and short channel performance are similar to (100). ► Impact ionization at both drain and source was found to enhance HCI degradation. ► NBTI results demonstrate that the (110) orientation is slightly worse than (100). ► The NBTI kinetics for generated interface traps (ΔNIT) is similar to planar devices.
The performance and reliability of (100) and (110) sidewall, silicon-on-insulator (SOI) FinFETs with a Hf-based gate dielectric were evaluated. Unlike the typical planar MOSFET mobility orientation dependence, (110) FinFET sidewalls do not impair electron mobility and result in good short channel performance compared to (100) FinFET sidewall devices. Hot carrier injection (HCI) degradation was also investigated with nMOS and pMOS high-κ FinFETs on both sidewall surface orientations. Impact ionization at the source, as well as at the traditional drain side, was found to enhance HCI degradation when gate voltage (Vg)=drain voltage (Vd). The degradation becomes more pronounced as the gate length decreases, with a negligible dependence on substrate orientation. However, the orientation dependence of negative bias temperature instability (NBTI) on FinFETs demonstrates that the (110) orientation is slightly worse than (100). The kinetics of ΔNIT(t) under negative bias stress conditions suggests the interface trap density (NIT) is generated by a mechanism similar to that in planar devices.