- Title
- 1.52 mu m electroluminescence from GaAs-based quantum dot bilayers (vol 47, pg 44, 2011)
- Creators - without role
- M. A. Majid - com.pub2web.rdf.cci.facet.ContentItem[id=http://iet.metastore.ingenta.com/content/journals/10.1049/el.2011.9015-af1,webId=/content/journals/10.1049/el.2011.9015-af1,properties={vcard_organisation-name=}]D. T. D. Childs - com.pub2web.rdf.cci.facet.ContentItem[id=http://iet.metastore.ingenta.com/content/journals/10.1049/el.2011.9015-af1,webId=/content/journals/10.1049/el.2011.9015-af1,properties={vcard_organisation-name=}]H. Shahid - com.pub2web.rdf.cci.facet.ContentItem[id=http://iet.metastore.ingenta.com/content/journals/10.1049/el.2011.9015-af1,webId=/content/journals/10.1049/el.2011.9015-af1,properties={vcard_organisation-name=}]
- Publication Details
- Electronics letters, Vol.47(4), pp.289-289
- Publisher
- Inst Engineering Technology-Iet
- Number of pages
- 1
- Identifiers
- 9914156208331
- Academic Unit
- Effat University
- Language
- English
- Resource Type
- Journal article
Journal article
1.52 mu m electroluminescence from GaAs-based quantum dot bilayers (vol 47, pg 44, 2011)
Electronics letters, Vol.47(4), pp.289-289
17/02/2011
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