Abstract
The objective of the present study is to analyze the heat transfer in the gate-all-around (GAA) MOSFETs based on the Cattaneo and Vernotte (CV) model due to the finite heat propagation speed in these nanodevices. The derivation of the CV model from the Boltzmann transport equation (BTE) is presented. Using the finite-element method, the nonlinear heat conduction model coupled with Poisson and continuity equations has been numerically solved to predict the self-heating effect (SHE) in GAA MOSFET. The CV model is applied in several structures, namely, single-metal surrounding gate (SMSG), dual-metal surrounding gate (DMSG), and triple-metal surrounding gate (TMSG). The obtained results are also compared with those calculated with the Fourier law. The temporal evolution and spatial distribution of the temperature and heat flux have been investigated. It is seen that the oscillatory behavior of the temperature using the CV model is strengthened for the TMSG structure and by increasing the relaxation time. Furthermore, the TMSG structure leads to an important increase in the temperature inside the device.