Abstract
Heterostructures assembled from atomically thin materials have led to a new paradigm in the development of the next-generation high-performing functional devices. However, the construction of the ultrathin van der Waals (vdW) heterostructures is challenging and/or limited to materials with layered crystal structures. Herein, liquid metal vdW transfer method is used to construct large area heterostructures of atomically thin metal oxides of p-SnO/n-In2O3 with ease. The heterostructure exhibits both outstanding photodetectivity of 5 x 10(9) Jones and photoresponsivity of 1047 A W-1 with fast response time of 1 ms under illumination of the 280 nm light. Such excellent performances are due to the formation of the narrow bandgap of the staggered gap at the p-n junction produced by the high-quality SnO/In2O3 heterostructure. The facile production of high-quality vdW heterostructures using the liquid metal-based method therefore provides a promising pathway for realizing future optoelectronic devices.