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55 degrees C pulse lasing at 1.56 mu m of all-monolithic InGaAlAs/InP vertical cavity lasers
Journal article   Peer reviewed

55 degrees C pulse lasing at 1.56 mu m of all-monolithic InGaAlAs/InP vertical cavity lasers

C Kazmierski, J P Debray, R Madani, Sagnes, A Ougazzaden, N Bouadma, J Etrillard, F Alexandre and M Quillec
Electronics letters, Vol.35(10), pp.811-812
13/05/1999
DOI: https://doi.org/10.1049/el:19990533

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
Using an InP lattice matched InGaAlAs/InAlAs system, an all-monolithic vertical laser structure has been grown. Pulsed lasing at 1.56 mu m has been obtained up to +55 degrees C with 45 mu m diameter proton-implanted diodes. A thermal resistance of similar to 420 K/W has been estimated. The reported characterisations indicate the potential of this system laser for CW operation and for simple large-scale processing.

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