Abstract
We demonstrated 10 x 10 arrays of InGaN 17 mu m x 17 mu m micro-light-emitting diodes (mu LEDs) with a peak wavelength from 662 to 630 nm at 10-50 A/cm(2). The on-wafer external quantum efficiency reached 0.18% at 50 A/cm(2). The output power density of the red mu LEDs was obtained as 1.76 mW/mm(2), which was estimated to be higher than that of 20 mu m x 20 mu m AlInGaP red mu LEDs (similar to 630 nm). Finally, we demonstrate that InGaN red/green/blue mu LEDs could exhibit a wide color gamut covering 81.3% and 79.1% of the Rec. 2020 color space in CIE 1931 and 1976 diagrams, respectively. (C) 2021 Chinese Laser Press