Abstract
In this work, we propose a Germanium Fin Buried Oxide (FinBOX) Fin Electron-Hole Bilayer Tunnel FET (FBF-EHBTFET) structure. The proposed structure eliminates the gated underlaps and corner effect and also leads to an improved parasitic performance. This also reduces the device base area by similar to 25%. Further, the FinBOX provides an improved OFF state leakage suppression of more than three orders in comparison to the conventional FinEHBTFET. The proposed FinBOX EHBTFET with vertical non-gated underlaps also provides an excellent I-ON/I-OFF ratio > 2 x 10(8) at V-GS=V-DS = 0.5 V. Furthermore, the leakage suppression and reduced miller capacitance effect provides an excellent transient response with a better voltage scalability window when scaled from V-DD = 0.5 V to 0.4 V. A similar to 41% improved total propagation delay is achieved at V-DD = 0.4 V with similar to 61% suppressed overshoot.