Abstract
Methylammonium lead bromide (MAPbBr(3)) single crystal thin film shows great opportunities in high-performance optoelectronic devices due to its high absorption coefficient, high photoelectric conversion efficiency, and low trap-state density properties. In order to fabricate a highly sensitive self-powered photodetectors, herein, a MAPbBr(3) single crystal thin film/molybdenum disulfide (MoS2) vertical p-n heterostructure based photodetector has been built by typical polymer film assisted dry transfer method and micromachining technique. Attributing to the built-in electric field and the shortened transmit distance for the photogenerated carriers in this heterostructure, the device shows excellent photovoltaic characteristics with a maximum output electrical power of 7 nW and power conversion efficiency of 8% at 0.34 V under 532 nm laser. Moreover, prominent photoelectric properties with responsivity of 368 mA W-1 and detectivity of 3.74 x 10(12) Jones for 532 nm laser without any bias have been achieved, which are ranking high among the organic-inorganic hybrid perovskites based self-power photodetectors. These results demonstrate that the MAPbBr(3) single crystal thin film/MoS2 vertical heterostructure can pave a new way to develop high-performance photovoltaic devices.