Abstract
Owing to have an ideal bandgap of 1.45 eV for solar cell fabrication, Cadmium Telluride (CdTe) has gained vast popularity in recent years. However, there is a serious issue under research to make ohmic contact at the back electrode. In this numerical investigation CdS:O/CdTe cell is analyzed with different BSF layers such as As2Te3, PbTe, SnTe and GeTe which could be resolved the back contacting problem in CdTe solar cells. This comparative investigation is based on the performance of CdTe cell with those mentioned BSF materials in terms of Quantum efficiency (QE), light and dark IV characteristics. All the simulations were done by the popular one dimensional PV simulator 'Analysis of Micro-electronics and Photonic Structures' (AMPS-1D). The results here indicate that As2Te3 has performed better as a BSF layer with 25.07% of conversion efficiency. Not to mention, the other BSFs also showed good results comparing to the highly efficient CdTe cell reported recently.