Abstract
A novel model is presented for understanding photothermal diffusion processes when the interaction between holes and electrons occurs during the study of semiconducting material. The thermal properties and optical absorption of silicon (Si) material are measured using the photothermal technique. The elastic-thermodiffusion (ETD) excitation under the influence of a fixed electromagnetic field is studied when the thermal conductivity depends on a gradient temperature (variable thermal conductivity). The governing equations are taken during thermoelastic deformation (TD) and electronic deformation (ED) in one-dimensional (1D). In the Laplace domain, the analytical dimensionless solutions of the distributions of the hole charge field carrier, mechanical, heat, and electrons charge carrier density (plasma) waves under some initial and boundary conditions are obtained. Algebraically, the complete solutions can be obtained when some numerical approximations in a closed-form during the inversion of the Laplace transform are used. The propagation waves under the effect of the magnetic field of heat, mechanical, hole, and plasma waves were examined graphically and explained with some comparisons when the thermal conductivity is changed.