Abstract
In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) waves are dissociated from the remainder of the motion and remain unaffected by external fields. The coupled system of partial differential equations of the main interacting fields has been solved. Using the Laplace transform method, the governing equations of motion and heat conduction can be formulated in 2D. The hole charge carrier, displacement, thermal, and plasma boundary conditions are applied on the interface adjacent to the vacuum to obtain the basic physical quantities in the Laplace domain. The inversion of the Laplace transform with the numerical method is applied to obtain the complete solutions in the time domain for the main physical fields under investigation. The effects of thermoelastic, the phase-lag of the temperature gradient and the phase-lag of the heat flux, the hyperbolic two-temperature parameter, and comparing between silicon and germanium materials on the displacement component, carrier density, hole charge carrier, and temperature distribution have been discussed and obtained graphically.