Abstract
A unique three-step short-circuit protection method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This method can quickly detect the short-circuit event, reduce gate voltage to enhance the device short-circuit capability, and turn off the device under fault after confirmation. Experimental results prove that with this method, the short-circuit fault detection time for E-mode GaN HEMT is shortened from 2 μ s to several tens of nanoseconds, and the device can be successfully protected from fatal failure under high dc bus voltage without mistriggering.