Abstract
Photothermoelastic interactions in an infinite semiconductor medium containing a cylindrical hole with two temperatures are studied using mathematical method under the purview of the coupled theory of thermal, plasma and elastic waves. The internal surface of the hole is constrained and the carrier density is photogenerated by bound heat flux with an exponentially decaying pulse. Based on Laplace transform and the eigenvalue approach methodology, the solutions of all variables have been obtained analytically. The numerical computations for silicon-like semiconductor material have been obtained. The results further show that the analytical scheme can overcome mathematical problems to analyze these problems.