A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

M. Valenza; J. El Husseini; J. Gyani; F. Martinez; M. Bawedin; C. Le Royer; E. Augendre; J.F. Damlencourt

doi:10.1016/j.mee.2011.03.090

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A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Journal article

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A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

M. Valenza, J. El Husseini, J. Gyani, F. Martinez, M. Bawedin, C. Le Royer, E. Augendre and J.F. Damlencourt

Microelectronic engineering, Vol.88(7), pp.1298-1300

01/07/2011

DOI: https://doi.org/10.1016/j.mee.2011.03.090

Abstract

1/ f Noise

GeOI

PMOS

SiGe

Trap interface density

This paper presents an experimental investigation of Low-frequency Noise (LFN) measurements on Germanium-On-Insulator (GeOI) PMOS transistors processed on different wafers. The wafers are obtained by Ge enrichment technique and by Smart Cut™ technology. The slow oxide trap densities of back interface are used as a figure of merit to evaluate the process. The Smart Cut™ process is evaluated by studying GeOI pMOSFETs, and the enrichment process by studying Si 1− x Ge x ( x = 25% and 35%) pMOSFETs. The buried oxide is used as a back gate for experimental purposes. The extracted values are of the same order of magnitude for both processes and are close to those of state of art buried oxide SiO 2/Si interfaces, demonstrating that both the Smart Cut™ and enrichment techniques produce equally good quality interfaces.

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Title: A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology
Creators - without role: M. Valenza - IES – UNIVERSITE MONTPELLIER II – UMR CNRS 5214, Place E. Bataillon, 34095 Montpellier Cedex 5, France
J. El Husseini - IES – UNIVERSITE MONTPELLIER II – UMR CNRS 5214, Place E. Bataillon, 34095 Montpellier Cedex 5, France
J. Gyani - IES – UNIVERSITE MONTPELLIER II – UMR CNRS 5214, Place E. Bataillon, 34095 Montpellier Cedex 5, France
F. Martinez - IES – UNIVERSITE MONTPELLIER II – UMR CNRS 5214, Place E. Bataillon, 34095 Montpellier Cedex 5, France
M. Bawedin - IES – UNIVERSITE MONTPELLIER II – UMR CNRS 5214, Place E. Bataillon, 34095 Montpellier Cedex 5, France
C. Le Royer - CEA LETI
E. Augendre - CEA LETI
J.F. Damlencourt - CEA LETI
Publication Details: Microelectronic engineering, Vol.88(7), pp.1298-1300
Publisher: Elsevier B.V
Identifiers: 9918291508331
Academic Unit: Majmaah University
Language: English
Resource Type: Journal article