Abstract
Analysis of thermal and electrical characteristics of the proposed device, selective buried oxide junctionless transistor (SELBOX-JLT) along with its analog performance, is compared with silicon on insulator junctionless transistor (SOI-JLT). The proposed device shows better thermal efficiency. The maximum device temperature of SELBOX-JLT is 311 K, much less than that of SOI-JLT (445 K). The proposed device has almost no effect of self-heating on output characteristics. SELBOX-JLT exhibits better I-ON/I-OFF ratio, subthreshold slope, and drain-induced barrier lowering as compared to SOI-JLT for the same channel length. The analog performance parameters as transconductance (G(m)), transconductance/drain current ratio (G(m)/I-D), drain conductance (G(D)), output resistance (R-0), intrinsic gain (G(m)R(0)), and unity-gain frequency (f(T)) of the proposed device are found to be better than SOI-JLT.