Abstract
We have investigated the effect of emitter design key parameters such as depth factor and the peak concentration for different types of emitter diffusion profiles (uniform, exponential, Gaussian, and Erfc) on the performance of silicon (Si) solar cells. The value of the depth factor is optimized as 0.1 mu m for all these emitter diffusion profiles. Afterward, the peak concentration value is optimized for all the diffusion profiles. A close examination of relative diffusion lengths, conductivities, recombination rates, internal and external quantum efficiencies for these diffusion profiles revealed that among all the considered emitter diffusion profiles, the Erfc profile exhibits the maximum efficiency of 23.53% with an optimized peak concentration of 2 x 10(20) cm(-3) for the emitter and 1 x 10(19) cm(-3) for the back surface field doping. PC1D was used for all the simulations.