A comparison between resonant Raman scattering in type II GaAs/AlAs superlattices and single GaAs quantum wells

Journal article

Peer reviewed

A Sayari, A Mlayah, F. F Charfi, R Carles and R Planel

Physica status solidi. B. Basic research, Vol.207(2), pp.377-386

06/1998

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Exact sciences and technology

Iii-v and ii-vi semiconductors

Iii-v semiconductors

Infrared and raman spectra and scattering

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of specific thin films

Physics

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Title: A comparison between resonant Raman scattering in type II GaAs/AlAs superlattices and single GaAs quantum wells
Creators - without role: A Sayari - Laboratoire de Spectroscopie Moléculaire, Faculté des Sciences de Tunis, Campus Universitaire, 1060 Tunis, Tunisia
A Mlayah - Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse, France
F. F Charfi - Laboratoire de Spectroscopie Moléculaire, Faculté des Sciences de Tunis, Campus Universitaire, 1060 Tunis, Tunisia
R Carles - Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse, France
R Planel - Laboratoire de Microstructure et de Microélectronique, Centre National de Recherche Scientifique, Centre National d'Etudes de Télécommunications, Boîte Postal 107, 92225 Bagneux, France
Publication Details: Physica status solidi. B. Basic research, Vol.207(2), pp.377-386
Publisher: Wiley
Identifiers: 9933183508331
Academic Unit: University of Jeddah
Language: English
Resource Type: Journal article