Abstract
In this study, we unveiled that a conduction type can be controlled from the 2H-MoTe2 ambipolar semiconducting phase to the selective opposite n-type or p-type FETs. The polarity inversion has been achieved through the trapped interface states that exist between h-BN and SiO2 upon illumination with an external gate voltage. For the n-type doping effect, we found that it has a positive coefficient with the thickness of h-BN but the p-type doping was not achieved with a thickness of 50 nm or beyond. For the n-type MoTe2 FET, the carrier concentration n(n−MoTe2) and mobility μ(n−MoTe2) were calculated to be ∼2.07 × 1012 cm−2 and ∼20.17 cm2/V/s, respectively, while for the p-type FET n(p−MoTe2) and μ(p−MoTe2) are ∼2.16 × 1012 cm−2 and ∼24.04 cm2/V/s, respectively. Moreover, we also develop a lateral PIN diode with an intrinsic region that was in-between n- and p-type FETs. An electrical performance was also monitored, and an ideal rectifying behavior was reached with a rectification ratio (IfIr) of almost >106. The PIN diode also exhibits a self-biased photovoltaic behavior with an open-circuit voltage (Voc = 440.9 mV). This research work may pave the way for fabricating photodiodes with low power consumption using transition metal dichalcogenides materials.