A critical examination of the molecular-beam-epitaxial growth of InxGa1-xAs/GaAs strained quantum well structures

Journal article

Peer reviewed

J Pamulapati, J. E OH, N Debbar and P Bhattacharya

Journal of applied physics, Vol.65(3), pp.1361-1363

01/02/1989

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Physics

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

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Title: A critical examination of the molecular-beam-epitaxial growth of InxGa1-xAs/GaAs strained quantum well structures
Creators - without role: J Pamulapati - University of Michigan–Ann Arbor
J. E OH - Univ. Michigan, dep. electrical eng. computer sci., Ann Arbor MI 48109-2122, United States
N Debbar - University of Michigan–Ann Arbor
P Bhattacharya - University of Michigan–Ann Arbor
Publication Details: Journal of applied physics, Vol.65(3), pp.1361-1363
Publisher: American Institute of Physics
Identifiers: 9951703208331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article