Abstract
In this paper, we present a new structure of lateral bipolar transistor on selective buried oxide. The device does not use highly doped regions; however, it employs the concept of creating n and p type charge plasma in undoped silicon by using metal electrodes of different work functions. The proposed device is named as the selective buried oxide based bipolar charge plasma transistor (SELBOX-BCPT). An extensive 2D simulation study has revealed that the proposed SELBOX-BCPT device not only possesses all the advantages of the conventional BCPT device, but it also addresses various severe problems of the BCPT device. A significant improvement in major issues of poor cutoff frequency (f(T)), low breakdown voltage and thermal efficiency has been achieved. It has been observed that the f(T) has increased by similar to 94.6%, the breakdown voltage by 23.47% and the device is much cooler than the conventional BCPT device. A large current gain is obtained in the proposed device and is on a par with the conventional BCPT device. Further, by using mixed-mode simulation feature of the Atlas simulator, inverting amplifiers based on SELBOX-BCPT and the conventional BCPT have been realized. A significant improvement of 15% in switching-on transient time and 25.8% in switching-off transient time has been achieved in the proposed device in comparison to the conventional BCPT device.