A multiscale simulation approach for the MOCVD of GaN using a single-molecule precursor in a vertical stagnation flow reactor

Journal article

Peer reviewed

Merim Mukinovic, Gunther Brenner, Javaprakash Khanderi, Stephan Spöllmann, Roland A Fischer, Maxim Tafipolsky, Thomas Cadenbach and Rochus Schmid

Chemical vapor deposition, Vol.11(6-7), pp.306-316

07/2005

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

Theory and models of film growth

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Title: A multiscale simulation approach for the MOCVD of GaN using a single-molecule precursor in a vertical stagnation flow reactor
Creators - without role: Merim Mukinovic - Clausthal University of Technology
Gunther Brenner - Clausthal University of Technology
Javaprakash Khanderi - Ruhr University Bochum
Stephan Spöllmann - Ruhr University Bochum
Roland A Fischer - Ruhr University Bochum
Maxim Tafipolsky - Ruhr University Bochum
Thomas Cadenbach - Ruhr University Bochum
Rochus Schmid - Ruhr University Bochum
Publication Details: Chemical vapor deposition, Vol.11(6-7), pp.306-316
Publisher: Wiley-VCH
Identifiers: 9942159508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article