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A new numerical model applied to bipolar charge transport, trapping and recombination under low and high dc voltages
Journal article   Peer reviewed

A new numerical model applied to bipolar charge transport, trapping and recombination under low and high dc voltages

E. Belgaroui, I. Boukhris, A. Kallel, Gilbert Teyssedre and Christian Laurent
Journal of Physics D : Applied Physics, Vol.40(21), pp.6760-6767
07/11/2007

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Engineering Sciences

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