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A nitrogen dioxide sensor based on an organic transistor constructed from amorphous semiconducting polymers
Journal article   Peer reviewed

A nitrogen dioxide sensor based on an organic transistor constructed from amorphous semiconducting polymers

Arindam Das, Rene Dost, Tim Richardson, Martin Grell, John J. Morrison and Michael L. Turner
Advanced materials (Weinheim), Vol.19(22), pp.4018-4023
19/11/2007
DOI: https://doi.org/10.1002/adma.200701504

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
Organic field effect transistors based on amorphous semiconducting polymers are used as highly effective sensors for the detection of low concentrations of NO2. The figure shows the experimental setup used to detect the toxic odor. The threshold voltage rather than the charge carrier mobility is seen to be greatly modified by exposure to NO2.

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